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| 2005. 8. 16 1/3 semiconductor technical data smaz3.6v~smaz36v revision no : 0 voltage regulation and voltage limiting. voltage surge absorption. features h small surface mounting type. maximum rating (ta=25 ? ) sma dim millimeters a b c d e f g 4.5 0.2 2.6 0.2 1.5 0.2 5.0 0.3 1.2 0.3 2.0 0.2 0 ~ 0.15 h r 0.5 a b c h d e e 1 2 f g + _ + _ + _ + _ + _ + _ 1. anode 2. cathode zener diode silicon planar diode characteristic symbol rating unit power dissipation p d 1 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? type name marking lot no. type no. mark type no. mark type no. mark smaz3.6v z3.6 smaz8.2v z8.2 smaz20v z20 smaz3.9v z3.9 smaz9.1v z9.1 smaz22v z22 smaz4.3v z4.3 smaz10v z10 smaz24v z24 smaz4.7v z4.7 SMAZ11V z11 smaz27v z27 smaz5.1v z5.1 smaz12v z12 smaz30v z30 smaz5.6v z5.6 smaz13v z13 smaz33v z33 smaz6.2v z6.2 smaz15v z15 smaz36v z36 smaz6.8v z6.8 smaz16v z16 - - smaz7.5v z7.5 smaz18v z18 - -
2005. 8. 16 2/3 smaz3.6v~smaz36v revision no : 0 electrical characteristics (ta=25 ? ) type no. zener voltage vz (v) dynamic impedance zz ( ? ) reverse current i r ( a) min. max. iz (ma) max. i z (ma) max. v r (v) smaz3.6v 3.6 4.0 40 15 40 20 1.0 smaz3.9v 3.9 4.4 40 15 40 20 1.0 smaz4.3v 4.3 4.8 40 15 40 20 1.0 smaz4.7v 4.7 5.2 40 10 40 20 1.0 smaz5.1v 5.1 5.7 40 8 40 20 1.0 smaz5.6v 5.6 6.3 40 8 40 20 1.5 smaz6.2v 6.2 7.0 40 6 40 20 3.0 smaz6.8v 6.8 7.7 40 6 40 20 3.5 smaz7.5v 7.5 8.4 40 4 40 20 4.0 smaz8.2v 8.2 9.3 40 4 40 20 5.0 smaz9.1v 9.1 10.2 40 6 40 20 6.0 smaz10v 10.0 11.2 40 6 40 10 7.0 SMAZ11V 11.0 12.3 20 8 20 10 8.0 smaz12v 12.0 13.5 20 8 20 10 9.0 smaz13v 13.3 15.0 20 10 20 10 10.0 smaz15v 14.7 16.5 20 10 20 10 11.0 smaz16v 16.2 18.3 20 12 20 10 12.0 smaz18v 18.0 20.3 20 12 20 10 13.0 smaz20v 20.0 22.4 20 14 20 10 15.0 smaz22v 22.0 24.5 10 14 10 10 17.0 smaz24v 24.0 27.6 10 16 10 10 19.0 smaz27v 27.0 30.8 10 16 10 10 21.0 smaz30v 30.0 34.0 10 18 10 10 23.0 smaz33v 33.0 37.0 10 18 10 10 25.0 smaz36v 36.0 40.0 10 20 10 10 27.0 (note 1) the zener voltage is measured 40ms after power is supplied. (note 2) the dynamic impedance(z z ) are measured by superimposing a minute altemating current on the regulated current(i z ). 2005. 8. 16 3/3 smaz3.6v~smaz36v revision no : 0 power dissipation p d (mw) 0 0 p d - ta i z - v z zener voltage v z (v) zener current i z (ma) 1 10 100 1m 10m 100m 0 5 10 15 25 50 25 30 20 40 35 87.5 200 100 150 200 400 600 800 1200 1000 ambient temperature ta ( c) 10 13 11 15 12 16 18 20 22 33 36 27 30 24 3.6 3.9 9.1 4.3 4.7 5.1 5.6 6.8 6.2 8.2 7.5 ceramic substrate 82x30x1.0(mm) glass epoxy substrate 32x30x1.6(mm) individual part (not mounted) |
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